TEWORDT, M , HUGHES, R J F , MARTINMORENO, L , NICHOLLS, J T , ASAHI, H , KELLY, M J , LAW, V J , RITCHIE, D A , FROST, J E F , JONES, G A C and PEPPER, M (1994) Vertical tunneling between two quantum dots in a transverse magnetic field. Physical Review B, 49 (12).
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Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by the combined sidewall confinement and vertical confinement in an AlxGa1-xAs-GaAs triple-barrier diode with a conducting diameter of 180 nm. The fine structure that is observed in the main resonance peaks of the current-voltage characteristics is related to lateral quantization effects. Electrons tunnel between zero-dimensional (OD) states in the two coupled quantum dots. A magnetic field applied perpendicular (transverse) to the tunneling direction shifts the main (2D) resonance peaks to higher bias and causes a substantial broadening. Within the fine structure we find that the resonance positions are virtually magnetic-field independent, whereas the resonance amplitudes show significant variations with increasing magnetic field; a simple model is developed to describe this behavior in terms of the magnetic-field dependence of the interdot transition probabilities.
This is a Submitted version This version's date is: 15/3/1994 This item is not peer reviewed
https://repository.royalholloway.ac.uk/items/bae9e6dc-2c4b-539b-66fb-aab916141e4e/7/
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