Kim, G H , Liang, C T , Huang, C F , Nicholls, James, Ritchie, D A , Kim, P S , Oh, C H , Juang, J R and Chang, Y H (2004) From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots. Physical Review B, 69 (7).
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We have studied insulator-quantum Hall-insulator (I-QH-I) transitions in a gated two-dimensional GaAs electron gas containing InAs quantum dots. In this system Shubnikov-de Haas oscillations are observed in both the low-field and high-field insulating regimes, showing that Landau quantization and localization can coexist. A phase diagram is constructed based on our experimental results, and we see that the critical points of the I-QH-I transitions do not correspond to crossover from localization to Landau quantization. Moreover, good scaling behavior is observed on both sides of low- and high-field I-QH transitions.
This is a Submitted version This version's date is: 2/2004 This item is not peer reviewed
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